Light-emitting element with porous light-emitting layers

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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Details

C257S086000, C257S094000, C257S103000, C438S022000

Reexamination Certificate

active

11135639

ABSTRACT:
The invention relates to a light-emitting element with porous light-emitting layers. The light-emitting element comprises: a substrate, a first conductive cladding layer, a second conductive cladding layer and at least one porous light-emitting layer. The porous light-emitting layer is formed between the first conductive cladding layer and the second conductive cladding layer, and has an upper barrier layer, a lower barrier layer and a carrier trap layer. The carrier trap layer positioned between the upper barrier layer and the lower barrier layer has a plurality of chevron structures for defining a plurality of valley shaped structures, and is an indium-containing nitride structure, the energy band gap of which is less than those of the upper barrier layer and the lower barrier layer. By utilizing the light-emitting element of the invention, the driving voltage of the element can be decreased significantly; thereby a preferred crystalline structure can be obtained so that the anti-static electricity ability and element reliability could be improved. Moreover, a plurality of porous light-emitting layers with different wavelengths may be grown on the light-emitting element of the invention, so as to elevate the performance of the light-emitting element effectively, and also to achieve a light-mixing element of a single chip, meanwhile so as to obtain the properties of high light-emitting benefit, high reliability, high light-mixing modularity and low cost and the like.

REFERENCES:
patent: 5939732 (1999-08-01), Kurtz et al.
patent: 6376864 (2002-04-01), Wang
patent: 6562646 (2003-05-01), Watanabe et al.
patent: 11-354839 (1999-12-01), None

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