Light emitting element with employment of porous silicon and opt

Details Light emitting element with employment of porous silicon and opt Light emitting element with employment of porous silicon and opt

1993-01-22

1994-02-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 52, 257 59, 257 96, 257103, H01L 3300

Patent

active

052850781

ABSTRACT:
A carrier injection type light emitting element with employment of a pn junction established between porous silicon and a semiconductor having a conductivity type different from that of the porous silicon, and also optical devices such as an opto-optical converting element, a light transmitting element, a photocoupling circuit element, a photocoupling element and a display apparatus, which comprise such a carrier injection type light emitting element and a semiconductor light receiving element.

REFERENCES:
No Author, "Parallel Process System Realized by 3-Dimensional Shared Memory," Electronics, Oct. 1991, pp. 53-57.
Canham, "Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers," Appl. Phys. Lett. 57(10), 3 Sep. 1990, pp. 1046-1048.
Halimaoui et al., "Electroluminescence in the Visible Range During Anodic Oxidation of Porous Silicon Films," Appl. Phys. Lett. 59(3), 15 Jul. 1991, pp. 304-306.
Lehmann et al., "Porous Silicon Formation: A Quantum Wire Effect," Appl. Phys. Lett. 58(8), 25 Feb. 1991, pp. 856-858.
Richter et al., "Current-Induced Light Emission From A Porous Silicon Device," IEEE Electron Device Letters, vol. 12, No. 12, Dec. '91, pp. 691-692.
Paasche et al., "Amorphous-SiC Thin-Film P-i-N Light-Emitting Diode Using Amorphous-SiN Hot-Carrier Tunneling Injection Layers," IEEE Transactions on Electron Devices, vol. 36, No. 12, Dec. 1989, pp. 2895-2901.
Silicon Quantum Wire Array Fabrication By Electrochemical and Chemical Dissolution Of Wafers, L. T. Canham, pp. 1046-1048, Appl. Phs. Lett. vol. 57, No. 10, Sep. 3, 1990.
Quantum Size Effects On The Optical Band Gap Of Microcrystalline Si:H, Furukawa et al., Physical Review B, vol. 38, No. 8, Sep. 15, 1988, pp. 5726-5729.
Visible Light Emission From Quantized Planar Ge Structures, Venkatasubramanian et al., Appl. Phs. Lett. 59(13), Sep. 23, 1991, pp. 1603-1605.
Photoluminescence From Si/Ge Superlattices, Montie et al., Appl. Phs. Lett. 56(4), Jan. 22, 1990, pp. 340-342.
Applied Physics Letters 57(10), 3 Sep. 1990, pp. 1046-1048, "Physics on Optical/Electronic Integrated Circuit", H. Matsueda, pp. 279-309.

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