Light emitting element of cubic boron nitride

Details Light emitting element of cubic boron nitride Light emitting element of cubic boron nitride

1989-08-03

1990-12-25

James, Andrew J.

357 61, 357 63, H01L 3300

Patent

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049807307

ABSTRACT:
A method for growing a single crystal of a cubic boron nitride semiconductor in a growing container sealed under high pressure and high temperature conditions, which comprises dissolving in a dopant-containing boron nitride solvent a boron nitride starting material placed at a high temperature zone in the growing container, and providing a temperature gradient to the solvent so that the temperature dependence of the solubility is utilized to let the single crystal form and grow at a low temperature zone in the growing container.

REFERENCES:
patent: 3188537 (1965-06-01), Wentorf, Jr.
patent: 3216942 (1965-11-01), Wentorf
Journal of Chemical Physics, vol. 36, No. 8, 4/15/62, pp. 1990-1991, "Preparation of Semiconducting Cubic Boron Nitride", Wentorf.

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