Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-05-22
2007-05-22
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000
Reexamination Certificate
active
10958911
ABSTRACT:
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
REFERENCES:
patent: 4342944 (1982-08-01), SpringThorpe
patent: 5578162 (1996-11-01), D'Asaro et al.
patent: 5625202 (1997-04-01), Chai
patent: 5760422 (1998-06-01), Ishinaga
patent: 5917202 (1999-06-01), Haitz et al.
patent: 5977566 (1999-11-01), Okazaki et al.
patent: 5990500 (1999-11-01), Okazaki
patent: 6310364 (2001-10-01), Uemura
patent: 08-64872 (1996-03-01), None
patent: 08-288551 (1996-11-01), None
patent: 11-008410 (1999-01-01), None
patent: 11-191641 (1999-07-01), None
patent: 11-229168 (1999-08-01), None
patent: 11-298040 (1999-10-01), None
patent: 2000-164928 (2000-06-01), None
Okazaki Haruhiko
Sugawara Hideto
Crane Sara
Hogan & Hogan LLP
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