Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-11-14
2006-11-14
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000
Reexamination Certificate
active
07135714
ABSTRACT:
An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
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Okazaki Haruhiko
Sugawara Hideto
Crane Sara
Hogan & Hartson LLP
Kabushiki Kaisha Toshiba
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