Light-emitting element having PNPN-structure and...

Details Light-emitting element having PNPN-structure and... Light-emitting element having PNPN-structure and...

2007-03-20

2007-03-20

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With light activation

C257S157000, C257S183000, C257S192000, C257S194000, C257S280000, C257S471000, C257S477000

Reexamination Certificate

active

10505698

ABSTRACT:
A light-emitting element including a light-emitting thyristor and a schottky barrier diode is provided. A schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0 V by using such a schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.

REFERENCES:
patent: 6180960 (2001-01-01), Kusuda et al.
patent: 6507057 (2003-01-01), Ohno
patent: 0 410 695 (1991-01-01), None
patent: 0 917 212 (1999-05-01), None
patent: 1-238962 (1989-09-01), None
patent: 2-14584 (1990-01-01), None
patent: 2-92650 (1990-04-01), None
patent: 2-92651 (1990-04-01), None
patent: 2-263668 (1990-10-01), None
patent: 2001-326383 (2001-11-01), None

Affiliated with

Also associated with

Rating

Light-emitting element having PNPN-structure and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting element having PNPN-structure and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting element having PNPN-structure and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3799223