Light-emitting element having hole generating layer

Details Light-emitting element having hole generating layer Light-emitting element having hole generating layer

2005-08-03

2008-12-09

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257SE51051, C313S504000

Reexamination Certificate

active

07462883

ABSTRACT:
The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the drive voltage and the increase in the drive voltage over time are small and which can resist long-term use. A layer in contact with an electrode in a light-emitting element is a layer containing a P-type semiconductor or a hole-generating layer such as an organic compound layer containing a material having electron-accepting properties. The light-emitting layer is sandwiched between the hole-generating layers, and an electron-generating layer is sandwiched between the light-emitting layer and the hole-generating layer on a cathode side.

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Office Action (Application No. 200510088559.5) Dated Jun. 27, 2008.

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