Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2011-05-24
2011-05-24
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257SE33012, C313S506000
Reexamination Certificate
active
07947992
ABSTRACT:
A light-emitting element includes a cathode, an anode, a first light-emitting layer disposed between the cathode and the anode, a second light-emitting layer disposed between the first light-emitting layer and the cathode, a third light-emitting layer disposed between the second light-emitting layer and the cathode, a first interlayer disposed between the first and second light-emitting layers that has a function of preventing energy transfer of an exciton between the first and second light-emitting layers, and a second interlayer disposed between the second and third light-emitting layers that has a function of preventing energy transfer of an exciton between the second and third light-emitting layers, wherein the first interlayer has a hole-transporting property higher than that of the second interlayer, and the second interlayer has a electron-transporting property higher than that of the first interlayer.
REFERENCES:
patent: 2006/0227079 (2006-10-01), Kashiwabara
patent: A-2005-100921 (2005-04-01), None
Mitsuya Masayuki
Yasukawa Koji
Oliff & Berridg,e PLC
Prenty Mark
Seiko Epson Corporation
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