Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1998-08-04
2000-10-17
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 91, 257 99, H01L 3300
Patent
active
061335886
ABSTRACT:
A light-emitting element is formed in a semiconductor substrate having a semi-insulating upper layer and a conductive lower layer. An impurity is diffused into both layers, forming a light-emitting area by creating a pn junction in the lower layer. An additional current-conducting area is formed by diffusion of the impurity into the upper layer. An electrode is formed on the substrate, making electrical contact with the current-conducting area, but not covering any part of the light-emitting area. The current-conducting area carries current from the electrode to the light-emitting area.
REFERENCES:
patent: 5189496 (1993-02-01), Kuwabara
patent: 5523590 (1996-06-01), Ogihara et al.
Yoshihiro Takekida, "Design of Optical Printers", Triceps, 1985, pp. 121-126.
Hamano Hiroshi
Ogihara Mitsuhiko
Shimizu Takatoku
Taninaka Masumi
Frank Robert J.
Haddaway Keith G.
OKI Electric Industry Co., Ltd.
Tran Minh Loan
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