Light emitting element and production method thereof

Details Light emitting element and production method thereof Light emitting element and production method thereof

2007-02-21

2009-08-11

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S046000, C438S047000, C257S013000, C257SE33001

Reexamination Certificate

active

07572652

ABSTRACT:
A light emitting element having a light emitting element portion formed of a group III nitride-based compound semiconductor and having a layer to emit light. The light emitting element portion is formed by lifting off a substrate by wet etching after the light emitting element portion is grown on the substrate. The light emitting element portion has a lift-off surface that is kept substantially intact as it is formed in growing the light emitting element portion on the substrate.

REFERENCES:
patent: 4743750 (1988-05-01), Komatsu et al.
patent: 2004/0173802 (2004-09-01), Yukimoto
patent: 2004/0209390 (2004-10-01), Senda et al.
patent: 2008/0038857 (2008-02-01), Kim et al.
patent: 2004-269313 (2004-09-01), None
Chinese Office Action dated Sep. 5, 2008, with English translation.

Affiliated with

Also associated with

Rating

Light emitting element and production method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting element and production method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting element and production method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4116169