Light-emitting element and method of producing the same

Details Light-emitting element and method of producing the same Light-emitting element and method of producing the same

2005-02-08

2005-02-08

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S091000, C257S098000, C257S099000, C257S040000, C257S059000, C257S072000, C257S744000

Reexamination Certificate

active

06853013

ABSTRACT:
A light-emitting element comprising a transparent electrode, a light-emitting layer, and a back electrode, on a substrate, wherein the light-emitting layer comprises photoluminescent metal oxide nanoparticles having an average particle size of 1 to 50 nm; and a method of producing the same.

REFERENCES:
patent: 6399226 (2002-06-01), Kitaguchi et al.
patent: 20030034486 (2003-02-01), Korgel
patent: 20030218418 (2003-11-01), Sato et al.
Hedi Mattoussi et al., “Electroluminescence From Heterostructures of Poly(Phenylene Vinylene) and Inorganic CdSe Nanocrystals,” Journal of Applied Physics, Jun. 15, 1998, pp. 7965-7974, vol. 83, No. 12, USA.

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