Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-06-21
2011-06-21
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S040000, C257SE39007
Reexamination Certificate
active
07964864
ABSTRACT:
It is an object of the present invention to provide a light-emitting element having a layer containing a light-emitting material and a transparent conductive film between a pair of electrodes, in which electric erosion of the transparent conductive film and metal can be prevented, and also to provide a light-emitting device using the light-emitting element. According to one feature of the invention, a light-emitting element includes a first layer102containing a light-emitting material, a second layer103containing a material having a donor level, a third layer104including a transparent conductive film, and a fourth layer105containing a hole-transporting medium between a first electrode101and a second electrode106, in which the first layer102, the second layer103, the third layer104, the fourth layer105, and the second electrode106are provided sequentially, in which the second electrode106has a layer containing metal.
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Kumaki Daisuke
Seo Satoshi
Cao Phat X
Husch & Blackwell LLP
Semiconductor Energy Laboratory Co,. Ltd.
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