Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-04-10
2007-04-10
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000
Reexamination Certificate
active
11131437
ABSTRACT:
There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. According to the present invention, a light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided.
REFERENCES:
patent: 2005/0263775 (2005-12-01), Ikeda et al.
patent: 2003-303679 (2003-10-01), None
patent: 2003-303685 (2003-10-01), None
Hosoba Makoto
Ikeda Hisao
Ito Shunichi
Ohara Hiroki
Sakata Junichiro
Fish & Richardson P.C.
Prenty Mark V.
Semiconductor Energy Laboratory Co,. Ltd.
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