Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-05-31
2011-05-31
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S098000, C257SE33055, C977S774000
Reexamination Certificate
active
07952105
ABSTRACT:
A light-emissive device includes a substrate having a first electrode formed on the substrate. A colloidal light-emitting layer comprising inorganic, light-emissive particles is formed over the first electrode. A second electrode is formed over the light-emitting layer. At least one of the first and second electrodes is transparent. The transparent electrode preferably has a refractive index substantially equal to or greater than the refractive index of the colloidal light-emitting layer. Finally, a light-scattering layer is formed on a side of the transparent electrode opposite the colloidal light-emitting layer.
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Bryant Kiesha R
Global OLED Technology, LLC.
McKenna Long & Aldridge LLP.
Tornow Mark W
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