Light emitting display device and method of fabricating the...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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C257S292000, C257SE25032, C257SE51005, C438S149000

Reexamination Certificate

active

07915649

ABSTRACT:
A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.

REFERENCES:
patent: 2006/0030084 (2006-02-01), Young
patent: 2006/0145207 (2006-07-01), Kim et al.
patent: 2007/0093007 (2007-04-01), Deane
patent: 10-2003-0058720 (2003-07-01), None
patent: 10-2004-0056461 (2004-07-01), None
patent: 1020040056461 (2004-07-01), None
patent: 10-2006-0077122 (2006-07-01), None
patent: 10-2006-0077175 (2006-07-01), None

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