Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2011-03-29
2011-03-29
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257SE25032, C257SE51005, C438S149000
Reexamination Certificate
active
07915649
ABSTRACT:
A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.
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patent: 2006/0030084 (2006-02-01), Young
patent: 2006/0145207 (2006-07-01), Kim et al.
patent: 2007/0093007 (2007-04-01), Deane
patent: 10-2003-0058720 (2003-07-01), None
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patent: 1020040056461 (2004-07-01), None
patent: 10-2006-0077122 (2006-07-01), None
patent: 10-2006-0077175 (2006-07-01), None
Choi Byoung-Deog
Im Ki-Ju
Lee & Morse P.C.
Pert Evan
Samsung Mobile Display Co., Ltd.
Wilson Scott
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