Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-06-19
2010-02-02
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07655948
ABSTRACT:
The present disclosure provides a light emitting display device including a first substrate and a second substrate and a light emitting part disposed therebetween. The first substrate includes an active layer, source and drain electrodes, an insulating layer, and a gate electrode. The active layer is doped with first dopant ions and second dopant ions. The light emitting display may have a fast response characteristic due to a reduced resistance of the active layer and an improved characteristic of current drift.
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Office Action issued in corresponding Chinese Patent Application No. 200610091898.3; issued Jun. 6, 2008.
Office Action issued in corresponding Japanese Patent Application No. 2006-156345; issued Feb. 3, 2009.
Brinks Hofer Gilson & Lione
LG Display Co. Ltd.
Prenty Mark
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