Light emitting diodes with improved light extraction efficiency

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S099000, C257S094000, C257S096000, C257S081000, C257S680000, C369S112040

Reexamination Certificate

active

07064355

ABSTRACT:
Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent optical element (e.g., a lens or an optical concentrator) to a light emitting device comprising an active region includes elevating a temperature of the optical element and the stack and applying a pressure to press the optical element and the light emitting device together. A block of optical element material may be bonded to the light emitting device and then shaped into an optical element. Bonding a high refractive index optical element to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.

REFERENCES:
patent: 3769536 (1973-10-01), Antypas et al.
patent: 4109054 (1978-08-01), Burgyan
patent: 4391683 (1983-07-01), Buckley et al.
patent: 4675058 (1987-06-01), Plaster
patent: 4689652 (1987-08-01), Shimada et al.
patent: 4815084 (1989-03-01), Scifres et al.
patent: 4983009 (1991-01-01), Musk
patent: 4988579 (1991-01-01), Tomomura et al.
patent: 5040868 (1991-08-01), Waitl et al.
patent: 5055892 (1991-10-01), Gardner et al.
patent: 5130531 (1992-07-01), Ito et al.
patent: 5132430 (1992-07-01), Gaudiana et al.
patent: 5255171 (1993-10-01), Clark
patent: 5317170 (1994-05-01), Paoli
patent: 5376580 (1994-12-01), Kish et al.
patent: 5502316 (1996-03-01), Kish et al.
patent: 5528057 (1996-06-01), Yanagase et al.
patent: 5553089 (1996-09-01), Seki et al.
patent: 5661316 (1997-08-01), Kish, Jr. et al.
patent: 5698452 (1997-12-01), Goossen
patent: 5724376 (1998-03-01), Kish, Jr. et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 5837561 (1998-11-01), Kish, Jr. et al.
patent: 5875205 (1999-02-01), Spaeth et al.
patent: 5898185 (1999-04-01), Bojarczuk, Jr. et al.
patent: 5917201 (1999-06-01), Ming-Jiunn et al.
patent: 5925898 (1999-07-01), Späth
patent: 5966399 (1999-10-01), Jiang et al.
patent: 6015719 (2000-01-01), Kish, Jr. et al.
patent: 6075627 (2000-06-01), Feldman et al.
patent: 6091020 (2000-07-01), Fairbanks et al.
patent: 6091694 (2000-07-01), Späth
patent: 6155699 (2000-12-01), Miller et al.
patent: 6165911 (2000-12-01), Calveley
patent: 6214733 (2001-04-01), Sickmiller
patent: 6233267 (2001-05-01), Nurmikko et al.
patent: 6258699 (2001-07-01), Chang et al.
patent: 6412971 (2002-07-01), Wojnarowski et al.
patent: 6429462 (2002-08-01), Shveykin
patent: 6469785 (2002-10-01), Duveneck et al.
patent: 6483196 (2002-11-01), Wojnarowski et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 2002/0141006 (2002-10-01), Pocius et al.
patent: 2004/0051106 (2004-03-01), Baur et al.
patent: 0 926 744 (1999-06-01), None
patent: 355065473 (1980-05-01), None
patent: 09167515 (1997-06-01), None
patent: WO 00/69000 (2000-11-01), None
patent: WO 00/70687 (2000-11-01), None
patent: WO01/80322 (2001-04-01), None
patent: WO01/80322 (2001-04-01), None
patent: WO 01/41219 (2001-06-01), None
patent: WO 01/41225 (2001-06-01), None
patent: WO02/37578 (2002-05-01), None
Joshua Israelsohn, “Switching the light fantastic”, Techtrends, EDN, Oct. 26, 2000, 10 pages.
J.W. Osenbach, et al., Low Cost/High Volume Laser Modules Using Silicon Optical Bench Technology, 1998 Electronic Components and Technology Conference, pp. 581-587.
Aluminum Oxide, Al203 For Optical Coating, , CERAC, Inc. Technical Publications, pp. 1-4.
“Bulk Measurement”, Sairon Technology, Inc., pp. 1-3.
Thomas R. Anthony, “Dielectric isolation of silicon by anodic bonding”, J. Appl. Phys. vol. 58, No. 3, Aug. 1, 1985, pp. 1240-1247.
Mary T. Strzelecki et al., “Low Temperature Bonding of Glasses and Glass Ceramics”, 8 pages.
Robert D. Simpson et al., “Hybrid Glass Structures For Telecommunication Applications”, 8 pages.
Joseph S. Hayden, Passive and Active Characterization of Hybrid Glass Substrates for Telecommunication Applications, 8 pages.
Patent Abstracts of Japan, Publication No. 09-153645, date of publication: Oct. 6, 1997, inventors: Asami Shinya, Koike Masayoshi, Akasaki Isamu and Amano Hiroshi, 15 pages.
Chui et al., “High-Efficiency AlGaInP Light-Emitting Didodes”, Semiconductor And Semimetals, vol. 64, Chapter 2, pp. 49-128.
Babić et al., “Room-Temperature Continuous-Wave Operation of 1.54-μm Vertical-Cavity Lasers”, IEEE Phontonics Technology Letters, vol. 7, No. 11, Nov. 1995, pp. 1225-1227.
Chua et al., “Dielectrically-Bonded Long Wavelength Vertical Cavity Laser on GaAs Substrates Using Strain-Compensated Multiple Quantum Wells”, IEEE Photonics Technology Letters, vol. 6, No. 12, Dec. 1994, pp. 1400-1402.
Fischer et al., “Highly Refractive Glasses to Improve Electroluminescent Diode Efficiencies”, Journal of the Electrochemical Society: Solid State Science, Dec. 1969, pp. 1718-1722.
Carr, “Photometric Figures of Merit for Semiconductor Luminescent Sources Operating in Spontaneous Mode”, Infrared Physics, 1966, vol. 6, pp. 1-19.
WO 00/70687, Translation from German, World Organization of Intellectual Property.
WO 006900, Translation from German, World Organization of Intellectual Property.
WO 01/80322 A2, Translation from German, World Organization of Intellectual Property.
WO 02/37578 A1, Translation from German, World Organization of Intellectual Property.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Light emitting diodes with improved light extraction efficiency does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting diodes with improved light extraction efficiency, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting diodes with improved light extraction efficiency will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3681247

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.