Light-emitting diodes with high illumination

Details Light-emitting diodes with high illumination Light-emitting diodes with high illumination

1995-10-05

1999-02-09

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 97, 257103, H01L 3300

Patent

active

058698493

ABSTRACT:
A surface-emitting AlGaInP LED is disclosed. The LED uses a GaP layer as a window layer to eliminate the current crowding effect, or may has an ITO window layer and use GaP, instead of GaAs, as the substrate to eliminate the current-crowding effect and avoid the emitted light being absorbed by the substrate. The GaP layer is bonded to the double hetero-structure epitaxy layer by a wafer bonding technique. The present invention, however, provides a manufacturing procedure which is easier and more reliable to handle than prior arts.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5481122 (1996-01-01), Jou et al.
patent: 5502316 (1996-03-01), Kish et al.

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