Light emitting diodes with current spreading layer

Details Light emitting diodes with current spreading layer Light emitting diodes with current spreading layer

2005-10-25

2005-10-25

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

C257S094000, C257S103000

Reexamination Certificate

active

06958494

ABSTRACT:
A light-emitting diode (LED) for both AlGaInP- and GaN-based materials needs a good transparent current spreading layer to disseminate electrons or holes from the electrode to the active layer. The present invention utilizes a conductive and transparent ITO (Indium Tin Oxide) thin film with an ultra-thin (to minimize the absorption) composite metallic layer to serve as a good ohmic contact and current spreading layer. The present invention avoids the Schottky contact due to direct deposition of ITO on the semiconductor. For AlGaInP materials, a thick GaP current spreading layer is omitted by the present invention. For GaN-based LEDs with the present invention, semi-transparent Ni/Au contact layer is avoided. Therefore, the light extraction of LED can be dramatically improved by the present invention. Holes may be etched into the semiconductor cladding layer forming a Photonic Band Gap structure to improve LED light extraction.

REFERENCES:
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 5977566 (1999-11-01), Okazaki et al.
patent: 6420732 (2002-07-01), Kung et al.
patent: 6515306 (2003-02-01), Kuo et al.
patent: 6577661 (2003-06-01), Wang et al.
patent: 6580096 (2003-06-01), Chen et al.
patent: 2003/0141507 (2003-07-01), Krames et al.

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