Light emitting diodes which emit in the infrared

Details Light emitting diodes which emit in the infrared Light emitting diodes which emit in the infrared

1978-07-05

1980-01-15

Edlow, Martin H.

Oscillators

Relaxation oscillators

357 17, 357 16, 331 945H, H01S 3319, H01L 3300

Patent

active

041841719

ABSTRACT:
A semiconductor double heterostructure (DH) laser or spontaneous emitting diode is described which emits radiation in the infrared region of the spectrum from about 3.5 to 5.5 micrometers. The DH structure comprises a Group III-V lattice-matched system, in particular, Al.sub.y Ga.sub.1-y Sb--InAs.sub.x Sb.sub.1-x where 0.ltoreq.y.gtoreq.1 and 0.82.ltoreq..times..ltoreq.0.91, approximately.

REFERENCES:
patent: 3982261 (1976-09-01), Antypas
patent: 3995303 (1976-11-01), Nahoy
patent: 4032951 (1977-06-01), DeWinter
patent: 4086608 (1978-04-01), Clawson
patent: 4105955 (1978-08-01), Hayashi
patent: 4122407 (1978-10-01), Van Vechlen

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