Light emitting diodes (LEDs) with improved light extraction...

Details Light emitting diodes (LEDs) with improved light extraction... Light emitting diodes (LEDs) with improved light extraction...

2007-03-06

2007-03-06

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S029000, C438S048000, C257S088000, C257S093000, C257S098000, C257SE21125

Reexamination Certificate

active

11032880

ABSTRACT:
Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

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