Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2011-03-01
2011-03-01
Lee, Calvin (Department: 2892)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257S098000
Reexamination Certificate
active
07897420
ABSTRACT:
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
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Cheng Chao-Chen
Cheng Hao-Chun
Chu Chen-Fu
Fan Feng-Hsu
Liu Wen-Huang
Lee Calvin
Patterson & Sheridan L.L.P.
SemiLEDs Optoelectronics Co. Ltd.
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