Light-emitting diodes and method of manufacturing the same

Details Light-emitting diodes and method of manufacturing the same Light-emitting diodes and method of manufacturing the same

1996-09-18

1998-02-10

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Active layer of indirect band gap semiconductor

257 94, H01L 2715, H01L 3112, H01L 3300

Patent

active

057172269

ABSTRACT:
A surface-emitting AlGaInP LED is disclosed. The manufacturing method comprises the steps of: (i) forming a buffer layer, a first type of AlGaInP cladding layer, a AlGaInP active layer, a second type of AlGaInP cladding layer, and a second type of contact layer on a first type of GaAs substrate; (ii) forming a conductive transparent electrode; (iii) by using photolithography and etching techniques, a first photoresist layer with a hole is formed on the middle above the transparent electrode; (iv) etching the portion of the transparent electrode and the second type of GaAs layer not covered by the photoresist layer until the second type of AlGaInP cladding layer; (v) forming a metal layer on the hole being etched to form a Schottky barrier; (vi) thermal annealed to thicken an native oxide formed between the metal layer and the second type of AlGaInP cladding layer to increase the Schottky barrier level; (vii) removing the first photoresist layer, and coating a back electrode on an opposite surface of the first type of GaAs substrate; (viii) employing the photolithography and etching techniques and a mask being used in the photolithography of step (iii) to form a second photoresist layer with a hole at the center thereof; and (ix) forming a second metal over the metal layer being formed on the second type of AlGaInP cladding layer at step (v). The Schottky barrier and the native oxide serve as a current-blocking layer, and the luminance of a light-emitting diode is improved.

REFERENCES:
patent: 5281830 (1994-01-01), Kotacki et al.
patent: 5488235 (1996-01-01), Nozaki et al.

Affiliated with

Also associated with

Rating

Light-emitting diodes and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting diodes and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting diodes and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2079184