Light emitting diode with tilted plane orientation

Details Light emitting diode with tilted plane orientation Light emitting diode with tilted plane orientation

1997-05-05

1999-07-13

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 94, 257627, 257 13, 438973, H01L 3300, H01L 2904, H01L 31036

Patent

active

059230541

ABSTRACT:
In a light-emitting diode, which comprises epitaxial wafer where a gallium phosphide or a gallium phosphide arsenide mixed crystal epitaxial layer is grown on a III-V family compound single crystal substrate having zinc blende type crystal structure, the surface of said substrate has a plane orientation to this plane. As a result, it is possible to improve light emitting output and to ensure longer service life.

REFERENCES:
patent: 5173751 (1992-12-01), Ota et al.
patent: 5291033 (1994-03-01), Morishima
patent: 5534717 (1996-07-01), Murasato et al.
U.S. Department of Commerce, National Technical Information Service, PB82-162405. Jun. 1980.
Solid State Electronics, vol. 23, pp. 611-619. Dec. 1980.
Japanese Patent Abstract Laid-Open Publication No. 3-16993. Jun. 1989.
Japanese Patent Abstract Laid-Open Publication No. 61-261300. May 1985.

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