Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-07-19
2005-07-19
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S099000, C257S103000
Reexamination Certificate
active
06919585
ABSTRACT:
A light-emitting diode is based on an undoped intrinsic SiC substrate on which are grown: an insulating buffer or nucleation structure; a light-emitting structure; window layers; a semi-transparent conductive layer; a bond pad adhesion layer; a p-type electrode bond pad; and an n-type electrode bond pad. In one embodiment, the light-emitting surface of the substrate is roughened to maximize light emission.
REFERENCES:
patent: 5063421 (1991-11-01), Suzuki et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5786233 (1998-07-01), Taskar et al.
patent: 5834331 (1998-11-01), Razeghi
patent: 5877558 (1999-03-01), Nakamura et al.
patent: 6133589 (2000-10-01), Krames et al.
patent: 6193797 (2001-02-01), Shiomi et al.
patent: 6306675 (2001-10-01), Tsong et al.
patent: 6429032 (2002-08-01), Okuyama et al.
patent: 6614172 (2003-09-01), Chiu et al.
Lee et al., “Efficiency improvement in light-emitting diodes based on geometrically deformed chips,” Light-Emitting Diodes: Research, Manufacturing, and Applications III, Proceeding of SPIE vol. 3621, 1999, pp. 237-248.
Dickinson Wright PLLC
Edwards, Esq. Jean C.
Jackson Jerome
Lumei Optoelectronics, Inc.
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