Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Patent
1998-04-07
2000-06-20
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
257 94, 257 96, 257 97, 257 99, 438 46, 438 47, H01L 3300
Patent
active
060780614
ABSTRACT:
The opening portion as the pattern shift detecting portion is formed in the insulating layer so that an edge of the electrode pattern extends to the opening portion when the electrode pattern shifts and the contact resistivity between the light emitting portion and the electrode pattern increases more than the predetermined value during the patterning process. If the electrode pattern shifts to a direction of the scribe line, the electrode pattern is electrically connected to the P-type diffusion region via the pattern shift detecting portion. As a result, the electrode pattern is shorted an N-type electrode pattern via the P-type diffusion region and the N-type GaAsP/GaAs substrate Therefore, the light emitting diode can precisely detect inferior products without visual inspection.
REFERENCES:
patent: 4145707 (1979-03-01), Sadamassa et al.
patent: 4924276 (1990-05-01), Heime et al.
patent: 5113232 (1992-05-01), Itoh et al.
patent: 5449926 (1995-09-01), Holm et al.
patent: 5652438 (1997-07-01), Sassa et al.
Mintel William
Oki Data Corporation
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