Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-08-16
2011-08-16
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S039000, C438S066000, C438S080000, C438S082000, C438S089000, C315S122000, C315S125000, C315S145000, C315S147000, C315S310000, C257S072000, C257S079000, C257S088000, C257S091000, C257S093000, C257S094000, C257S095000, C257SE31099, C257SE31105, C257SE31126, C257SE33001
Reexamination Certificate
active
07998761
ABSTRACT:
The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
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Kim Dae Won
Kim Jong Hwan
Oh Duck Hwan
Yoon Yeo Jin
Abdelaziez Yasser A
Garber Charles D
H.C. Park & Associates PLC
Seoul Opto Device Co., Ltd.
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