Light-emitting diode with increased light extraction

Details Light-emitting diode with increased light extraction Light-emitting diode with increased light extraction

2011-08-30

2011-08-30

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000, C257SE33068

Reexamination Certificate

active

08008678

ABSTRACT:
Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.

REFERENCES:
patent: 3954534 (1976-05-01), Scifres et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 5793062 (1998-08-01), Kish, Jr. et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6221683 (2001-04-01), Nirschl et al.
patent: 6277665 (2001-08-01), Ma et al.
patent: 6429460 (2002-08-01), Chen et al.
patent: 6495862 (2002-12-01), Okazaki et al.
patent: 6614172 (2003-09-01), Chiu et al.
patent: 6649440 (2003-11-01), Krames et al.
patent: 6658041 (2003-12-01), Uebbing
patent: 6744071 (2004-06-01), Sano et al.
patent: 6770542 (2004-08-01), Plossl et al.
patent: 6800500 (2004-10-01), Coman et al.
patent: 6821804 (2004-11-01), Thibeault et al.
patent: 6825501 (2004-11-01), Edmond et al.
patent: 6869820 (2005-03-01), Chen
patent: 6933160 (2005-08-01), Hon
patent: 6992331 (2006-01-01), Hon et al.
patent: 7135713 (2006-11-01), Chen
patent: 7352006 (2008-04-01), Beeson et al.
patent: 7384807 (2008-06-01), Yoo
patent: 7388232 (2008-06-01), Suehiro et al.
patent: 7413918 (2008-08-01), Tran et al.
patent: 2004/0041164 (2004-03-01), Thibeault et al.
patent: 2004/0227151 (2004-11-01), Konno et al.
patent: 2004/0227705 (2004-11-01), Fujimoto et al.
patent: 2004/0256601 (2004-12-01), Hubacek et al.
patent: 2005/0285127 (2005-12-01), Noto et al.
patent: 2005029572 (2005-03-01), None
patent: 2005029573 (2005-03-01), None
Schnitzer et al., “30% External Quantum Efficiency from Surface Textured, Thin-Film Light-Emitting Diodes,” Appl. Phys. Lett. Oct. 1993 vol. 63(16): pp. 2174-2176.
Kuo et al., “Nitride-based near-ultraviolet LEDs with an ITO transparent contact,” Materials Science & Engineering B, Solid-state Materials for Advanced Technology, 2004 vol. 106(1): pp. 69-72.
Kock et al., “Strongly Directional Emission from AlGaAs/GaAs Light-Emitting Diodes,” Appl. Phys. Lett., Nov. 1990 vol. 57: pp. 2327-2329.

Affiliated with

Also associated with

Rating

Light-emitting diode with increased light extraction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light-emitting diode with increased light extraction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light-emitting diode with increased light extraction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2706905