Light emitting diode with improved luminous efficiency having a

Details Light emitting diode with improved luminous efficiency having a Light emitting diode with improved luminous efficiency having a

1996-08-27

1999-04-27

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

257 81, 257 91, 257 99, H01L 3300

Patent

active

058981926

ABSTRACT:
A light emitting diode for generating preferably green light with improved luminous efficiency. A number of epitaxial layers suitable for the light emission is arranged on a doped semiconductor substrate wafer of GaP. The surface of the epitaxial layers is completely frosted. The light emission from the interior is considerably improved by the frosting. A contact layer structure is placed on the frosted surface for contacting the light emitting diode. The contact layer consists of several partial layers and covers at least a part the frosted surface. There is also a contact layer at the rear of the light emitting diode.

REFERENCES:
patent: 3537028 (1970-10-01), Pankove
patent: 5132751 (1992-07-01), Shibata et al.
patent: 5162878 (1992-11-01), Sasagawa et al.
O. Aina et al.: "Microstructure and Resistivity of Laser-Annealed Au-Ge Ohmic Contacts on GaAs". In: J. Electrochem. Soc.: Solid-State Science and Technology, Oct. 1981, vol. 128, No. 10, pp. 2183-2187.
L.R. Zheng et al.: "Shallow ohmic contacts to n-type GaAs and Al.sub.x Ga.sub.1-x As". In: Appl. Phys. Lett. 60 (7), Feb. 17, 1992, pp. 877-879.
Masato Yamashita et al.: "Barrier metal against Ga and Zn out-diffusion in p-GaP/Au:Zn contact system". In: J. Appln. Phys. 52 (12), Dec. 1981, pp. 7304-7308.

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