Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-04-19
2009-12-22
Tran, Thien F (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S081000, C257S088000, C257S098000, C257S099000, C257SE33061
Reexamination Certificate
active
07635871
ABSTRACT:
A light emitting diode (LED) with higher illumination efficiency is revealed. The LED includes a LED chip and an optical layer arranged on the bottom of the LED chip. The optical layer is a light-guiding layer, a light reflective layer or an energy-conversion layer that increases light emitting efficiency of the LED. Furthermore, a rough layer is disposed between the LED chip and the optical layer so as to increase surface area of the LED chip. Thus light emitted from the LED chip enters the optical layer more easily and the illumination efficiency of the LED is increased.
REFERENCES:
patent: 6586874 (2003-07-01), Komoto et al.
Cheng Wei-Kang
Huang Kuo-Chin
Pan Shyi-Ming
Chow Ming
Formosa Epitaxy Incorporation
Sinorica LLC
Tran Thien F
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