Light emitting diode with high illumination

Details Light emitting diode with high illumination Light emitting diode with high illumination

2008-03-19

2009-10-06

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S088000, C257S094000, C257SE33068, C257SE33044, C438S022000, C438S029000, C438S046000

Reexamination Certificate

active

07598530

ABSTRACT:
A light emitting diode (80) includes a first and a second semiconductor structures (30, 40), and an adhesive layer (34, 46) between the first and the second semiconductor structures. The first semiconductor structure includes a n-type AlGaInP cladding layer (13), a p-type AlGaInP cladding layer (17), an AlGaInP active layer (15) between the n-type and the p-type AlGaInP cladding layers, a transparent conducting layer (62) on the n-type AlGaInP cladding layer, a first electrical contact (82) on the transparent conducting layer, ohmic electrodes (21) ohmic contact the p-type AlGaInP cladding layer, and a reflecting layer (32) on an opposite side of the p-type AlGaInP cladding layer to the AlGaInP active layer. The second semiconductor structure includes a carrier substrate (42), an ohmic contact layer (44) on the carrier substrate, and a second electrical contact (74) on an opposite side of the carrier substrate to the ohmic contact layer.

REFERENCES:
patent: 5869849 (1999-02-01), Jou et al.
patent: 2004/0124428 (2004-07-01), Lin et al.
patent: 2004/0135166 (2004-07-01), Yamada et al.
patent: 2005/0062049 (2005-03-01), Lin et al.
patent: 2007/0290221 (2007-12-01), Tsai et al.

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