Light emitting diode with electro-chemically etched porous silic

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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257 79, 257 14, H01L 3300

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active

053249658

ABSTRACT:
A light emitting diode comprising microporous silicon of one conductivity type forming a PN junction with silicon of the opposite conductivity type and electrodes respectively connected to said regions, at least one of the electrodes being transparent.

REFERENCES:
patent: 4801380 (1989-01-01), Parker et al.
patent: 5206523 (1993-04-01), Goesele et al.
Steiner et al., "Blue and Green Electroluminescence from a Porous Silicon vice," Electron Device Letters, vol. 14, No. 7, Jul. 1993.
Koshida, Nobuyoshi and Koyama, Hideki "Visible Electroluminescence From Porous Silicon", Appl. Phys. Lett. 60(3), Jan. 20, 1992.
Richter, A.; Lang, W.; Steiner, P.; Kozlowski, F.; and Sandmaier, H.; "Visible Electroluminescence of Porous Silicon Devices With a Solid State Contact", Mat. Res. Soc. Symp. Proc., vol. 256, 1992.
Bassous, E.; Freeman, M.; Halbout, J.-M.; Iyer, S. S.; Kesan V. P.; Munguia, P.; Pesarcik, S. F.; and Williams, B. L.; "Characterization Of Microporous Silicon Fabricated By Immersion Scanning", Mat. Res. Soc. Symp. Proc., vol. 256, 1992.
Namavar, Fereydoon; Maruska, H. Paul; and Kalkhoran, Nader M.; "Visible Electroluminescence From Porous Silicon np Heterojunction Diodes", Appl. Phys. Lett. 60 (20), May 18, 1992.
Canham, L. T., "Silicon Quantum Wire Array Fabrication By Electrochemical And Chemical Dissolution Of Wafers", Appl. Phys. Lett. 57 (10), Sep. 3, 1990.
Lehmann, V. and Gosele, U., "Porous Silicon Formation: A Quantum Wire Effect", Appl. Phys. Lett. 58 (8), Feb. 25, 1991.
Harvey et al., "Optical Studies of Electroluminescent Structures from Porous Silicon", Mat. Res. Soc. Symp. Proc., vol. 263, 1993.

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