Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-06-07
2005-06-07
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S081000, C257S091000, C257S098000
Reexamination Certificate
active
06903381
ABSTRACT:
The present invention discloses a light-emitting diode and a method for manufacturing such a light-emitting diode with a direct band-gap III-V compound semiconductor material on a GaAs substrate. It is implemented by forming a first conductive electrode on the top edge of the epitaxial LED layer and a second conductive electrode opposite the first conductive electrode on the edge of a transparent substrate. Further, after the first conductive electrode and second conductive electrode are connected by chip bonding skill, it is selectively to remove the GaAs substrate and plate a transparent electrode on the top portion of the epitaxial LED layer. Therefore, when casting from P-N junction of the light-emitting diode, the light will go through with directions of the top portion of epitaxial layer and transparent substrate.
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Lin Ming-Der
Tsai Chang-Da
Eckert George
Opto Tech Corporation
Rosenberg , Klein & Lee
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