Light emitting diode with asymmetrical energy band structure

Details Light emitting diode with asymmetrical energy band structure Light emitting diode with asymmetrical energy band structure

1997-09-04

1999-06-29

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 96, 257 98, 257103, H01L 3300

Patent

active

059172010

ABSTRACT:
A high bandgap material is used as a cladding layer to confine the carrier overflow in a aluminum-gallium-indium-phosphide light emitting diode. The quantum efficiency is improved. The use of this high bandgap material as a window material also prevents current crowding. The efficiency can further be improved by using a Distributed Bragg Reflector in the structure to reflect light, and a buffer layer to reduce interface dislocation.

REFERENCES:
patent: 5481122 (1996-01-01), Jou et al.
patent: 5744829 (1998-04-01), Murasato et al.
patent: 5789768 (1998-08-01), Lee et al.

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