Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1998-08-24
2000-08-01
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
257 97, H01L 3300
Patent
active
060970413
ABSTRACT:
A light emitting diode includes a semiconductor substrate of a first conductivity type. A first electrode is formed on a part of the substrate. A reflection stack of the first conductivity type is formed on the substrate. An active layer is then formed on the reflection stack. An anti-reflection stack of a second conductivity type is grown on the active layer, and the anti-reflection stack consists of a plurality of layers, wherein each layer has a thickness of (m+1).lambda./2, where m is zero or a positive integer and .lambda. is a wavelength of radiation generated by the active layer. A window layer of the second conductivity type is formed on the anti-reflection stack. A second electrode is then formed on a part of the window layer.
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Chang Liang-Tung
Cheng Shiang-Peng
Kuo Kuan-Chu
Lin Chiao-Yun
Lin Ying-Fu
Baumeister Bradley William
Jackson, Jr. Jerome
Kingmax Technology Inc.
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