Light-emitting diode with a thick transparent layer

Details Light-emitting diode with a thick transparent layer Light-emitting diode with a thick transparent layer

1992-01-10

1993-08-03

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 94, 257 96, 257 97, 257103, 372 45, 372 49, H01L 3300

Patent

active

052332047

ABSTRACT:
A light emitting diode (LED) including a light generation region situated on a light-absorbing substrate also includes a thick transparent layer which ensures that an increased amount of light is emitted from the sides of the LED and only a minimum amount of light is absorbed by the substrate. The thickness of the transparent layer is determined as a function of its width and the critical angle at which light is internally reflected within the transparent layer. The thick transparent layer is located either above, below or both above and below the light generation region. The thick transparent layer may be made of materials and with fabrication processes different from the light generation region.

REFERENCES:
patent: 4833511 (1989-05-01), Sugimoto
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5048035 (1991-09-01), Sugawara et al.
patent: 5153889 (1992-10-01), Sugawara et al.
Fletcher et al., "The Growth and Properties of High Performance AlGaInP Emitters Using a Lattice Mismatched GaP Window Layer," Journal of Electronic Materials, vol. 20, No. 12, 1991, pp. 1125-1130.

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