Light-emitting diode suitable as a pressure sensor

Details Light-emitting diode suitable as a pressure sensor Light-emitting diode suitable as a pressure sensor

1983-03-01

1986-08-05

Davie, James W.

357 16, 357 19, 357 26, 357 30, 357 61, H01L 3300, H01L 2984

Patent

active

046046372

ABSTRACT:
A light-emitting diode comprises III-V semiconductor material having a pn junction as its light-active zone from which luminescent radiation is emitted, the radiation having a pressure-dependent characteristic. The diode is characterized in that, for the purpose of pressure-dependent brightness of the light radiation, the composition of the light-active zone at the pn junction comprises a semiconductor material which has a composition which corresponds to a position close to the transition from a direct energy gap to an indirect energy gap and at which a change of the composition would result in a significant change in the brightness of the emission. The invention is particularly useful for potential-free measurement of pressure forces.

REFERENCES:
patent: 3384837 (1968-05-01), Toussaint et al.
patent: 3525947 (1970-08-01), Winstel et al.
patent: 3566215 (1971-02-01), Heywang
patent: 4141025 (1979-02-01), Bronshtein et al.
patent: 4274103 (1981-06-01), Yamamoto et al.
patent: 4278986 (1981-07-01), Mader
Kaliski et al., "Pressure Dependence of Al.sub.x Ga.sub.1-x As Light Emitting Diode Near the Direct-Indirect Transition", J. Appl. Phys. 57 (5), Mar. 1, 1985, pp. 1734-1738.
Nelson et al., "Effect of Composition and Pressure on the Nitrogen Isoelectronic Trap in GaAs.sub.1-x P.sub.x ", Jul. 15, 1976, Physical Review, vol. 14, No. 2, pp. 685-690.

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