Light emitting diode structure and manufacture method thereof

Details Light emitting diode structure and manufacture method thereof Light emitting diode structure and manufacture method thereof

2005-11-22

2005-11-22

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S094000

Reexamination Certificate

active

06967346

ABSTRACT:
A light emitting diode (LED) structure and manufacture method thereof are disclosed, wherein a buffer layer is grown on a substrate and then an LED structural layer is grown on the buffer layer. The LED structural layer comprises a p-type quantum-dot epitaxial layer on a p-type GaN layer. As the p-type quantum-dot epitaxial layer has a coarsening and scattering effect the path of light emitted from an INGaN multiple-quantum-well structural layer is changed. Therefore, it is possible to decrease the probability of total reflection and thereby increase the light-emitting efficiency of LED.

REFERENCES:
patent: 6121121 (2000-09-01), Koide
patent: 6229834 (2001-05-01), Nisitani et al.
patent: 6835962 (2004-12-01), Udagawa
patent: 2002/0136932 (2002-09-01), Yoshida
patent: 2004/0026704 (2004-02-01), Nikolaev et al.

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