Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-05-04
2010-06-15
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S079000, C257S090000, C257SE33016
Reexamination Certificate
active
07737453
ABSTRACT:
Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.
REFERENCES:
patent: 6712478 (2004-03-01), Sheu et al.
patent: 2003/0122147 (2003-07-01), Sheu
patent: 2004/0099869 (2004-05-01), Gaska et al.
patent: 2004/0159851 (2004-08-01), Edmond et al.
Huang Ting-Kai
Lee Chi-Shen
Tsai Tzong-Liang
Huga Optotech Inc.
Jackson, Jr. Jerome
Page Dale
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