Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-10-08
2010-10-26
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S081000, C257S290000, C257S434000, C257S436000, C257S459000, C257SE25032, C257SE51022, C349S058000, C349S062000, C349S067000
Reexamination Certificate
active
07821094
ABSTRACT:
A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.
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Chang Hong-Da
Lin Hung-Yi
Estrada Michelle
Hsu Winston
Margo Scott
Teng Min-Lee
Touch Micro-System Technology Inc.
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