Light-emitting diode structure

Details Light-emitting diode structure Light-emitting diode structure

2006-08-08

2006-08-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S012000, C257S079000, C257SE33023, C257SE33025, C257SE33028, C257SE33033, C257SE33034, C375S213000, C375S213000

Reexamination Certificate

active

07087922

ABSTRACT:
A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlxInyGa1-x-yNzP1-z/AlpInqGa1-p-qNrP1-r, wherein 0≦x,y,z,p,q,r≦1, and AlxInyGa1-x-yNzP1-zhas an energy gap greater than that of AlpInqGa1-p-qNrP1-r. The AlxInyGa1-x-yNzP1-zlayers have increasing thickness and the AlpInqGa1-p-qNzP1-rlayers have decreasing thickness.

REFERENCES:
patent: 6924512 (2005-08-01), Tsuda et al.
patent: 2005/0148194 (2005-07-01), Lan et al.

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