Light emitting diode structure

Details Light emitting diode structure Light emitting diode structure

1978-10-25

1980-09-02

Edlow, Martin H.

357 18, 357 55, 357 16, H01L 3300

Patent

active

042209609

ABSTRACT:
A small-area light-emitting diode of the surface-emitting type has a double heterojunction semiconductor structure grown on a substrate. A semiconductor blocking layer having a hole formed therein is disposed between the substrate and the layers of the double heterojunction semiconductor structure to confine the transverse current flow for greater efficiency. A metallic contact layer is formed on the surface of the double heterojunction semiconductor structure on the side opposite the substrate and has a registering hole formed therein having a size approximately equal to the size of the hole formed in the semiconductor blocking layer and disposed in registration therewith along an axis perpendicular to the layers. The cap layer of the double heterojunction semiconductor structure may include a hole etched therethrough and in registration with the previously mentioned holes for better light emission. In a further embodiment, the light-emitting layer is restricted in surface area to a region aligned with said holes for even greater light efficiency and current confinement.

REFERENCES:
patent: 3968564 (1976-07-01), Springthorpe
patent: 3984262 (1976-10-01), Burnham
patent: 4053914 (1977-10-01), Goodwin

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