Light emitting diode package and fabrication method thereof

Details Light emitting diode package and fabrication method thereof Light emitting diode package and fabrication method thereof

2007-08-28

2007-08-28

Mai, Anh D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S276000, C257SE23051, C257SE23052, C257SE23053, C257SE23054, C257SE23012, C257SE23031, C257SE23010, C438S022000, C313S498000

Reexamination Certificate

active

11320968

ABSTRACT:
The present invention provides a light emitting diode (LED) package and the fabrication method thereof. The LED package includes a lower metal layer, and a first silicon layer, a first insulation layer, a second silicon layer, a second insulation layer, and a package electrode pattern formed in their order on the lower metal layer. The LED package also includes a spacer having a cavity, formed on the electrode pattern. The LED package further includes an LED mounted in the cavity by flip-chip bonding to the electrode patterns, and an optical element attached to the upper surface of the spacer.

REFERENCES:
patent: 5905275 (1999-05-01), Nunoue et al.
patent: 6593159 (2003-07-01), Hashimoto et al.
patent: 6744072 (2004-06-01), Romano et al.
patent: 2004/0222433 (2004-11-01), Mazzochette et al.
patent: 2005/0130351 (2005-06-01), Leedy
patent: 2003-218398 (2003-07-01), None

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