Light emitting diode, optoelectronic device and method of...

Details Light emitting diode, optoelectronic device and method of... Light emitting diode, optoelectronic device and method of...

2008-05-09

2010-11-16

Tran, Thien F (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S024000

Reexamination Certificate

active

07833809

ABSTRACT:
A light emitting diode structure including a substrate, a strain-reducing seed layer, an epitaxial layer, a first electrode and a second electrode is provided. The strain-reducing seed layer having a plurality of clusters is disposed on the substrate, and the material of the clusters is selected from a group consisting of aluminum nitride, magnesium nitride and indium nitride. The epitaxial layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The first electrode is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The second electrode is disposed on the second type doped semiconductor layer and electrically connected thereto.

REFERENCES:
patent: 6455337 (2002-09-01), Sverdlov
patent: 6847046 (2005-01-01), Wei et al.

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