Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-06-22
2010-12-14
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257SE51002, C257SE51018, C257SE51019, C257SE51021, C257SE33055, C257SE33062, C257SE33063
Reexamination Certificate
active
07851814
ABSTRACT:
Diode comprising a substrate and an organic electroluminescent layer interposed between a lower electrode and an upper electrode, at least one of which electrodes is formed from a multilayer which is itself formed by the stack of adjacent sublayers made of amorphous carbon, having different refractive indices n1, n2. The amorphous carbon contains no added silicon, thereby making it possible to avoid using silane for the manufacture. The multilayer provides an electrode function, a multimirror function and an encapsulation function.
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Feoktistov N. A. et al.: “Multilayer Systems Based on A-SI:C:J Films as Dielectric and Conducting Optical Mirrors” Technical Physics Letters, Amercan Institute of Physics. New York, US, vol. 20. No. 3, Mar. 1, 1994, es 180-181, XP000448028.
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Fery Christophe
Racine Benoit
Vaufrey David
Fried Harvey D.
Kim Jay C
Parker Kenneth A
Shedd Robert D.
Thomson Licensing
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