Light-emitting diode of GaAsP compound semiconductive material

Details Light-emitting diode of GaAsP compound semiconductive material Light-emitting diode of GaAsP compound semiconductive material

1988-06-29

1990-07-17

Mintel, William

357 16, 357 90, 357 61, H01L 3300

Patent

active

049424394

ABSTRACT:
To improve the external quantum efficiency of light-emitting diodes made from semiconductive material of III/V compounds with lattice constants heavily dependent on the respective material composition of the mixed crystal, for example in GaAsP light-emitting diodes, a thin surface layer having an increased energy band gap in relation to the covered material is arranged on the surface layer of mixed crystal containing the p-zone and being from the same mixed-crystal system, through which layer the p-zone extends, with the transition in the lattice structure between the two surface layers being abrupt.

REFERENCES:
patent: 4037241 (1977-07-01), Dierschke
patent: 4510515 (1985-04-01), Kajita et al.
patent: 4680602 (1987-07-01), Watanabe et al.
Craford et al., "Vapor Phase Epitaxial Materials for LED Applications", Proceedings of the IEEE, vol. 61, No. 7, Jul. 1973, pp. 862-880.

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