Light-emitting diode matrix with semi-insulating zones

Details Light-emitting diode matrix with semi-insulating zones Light-emitting diode matrix with semi-insulating zones

1985-11-15

1988-07-12

James, Andrew J.

357 45, 357 16, 357 55, 357 20, H01L 3300

Patent

active

047573570

ABSTRACT:
The invention relates to a matrix of light-emitting diodes and a method of manufacturing same. A matrix comprises highly doped contact lines of a first conductivity type, localization zones of the second conductivity type opposite to the first type extending transversely with respect to the semi-insulating zones arranged along lines and/or columns and separating along diodes an active layer in contact with the contact lines and a superficial injection layer. The contacts connect the diodes columnwise, regions being internally limited along lines by the area straight above the upper parts of the localization zones, and along columns by the semi-insulating regions. Thus, the contacts are entirely situated outside the light emitting zones defined by the localization zones. The method of manufacturing utilizes steps of localized etching and epitaxy.

REFERENCES:
patent: 3996492 (1976-12-01), McGroddy
patent: 4198251 (1980-04-01), Gaffre
patent: 4275403 (1981-06-01), Lebailly
patent: 4309670 (1982-01-01), Burnham et al.

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