Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-07-30
2011-10-25
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S079000, C257SE21001, C257SE33008, C257SE33001, C438S022000, C438S039000, C438S044000, C438S046000
Reexamination Certificate
active
08044381
ABSTRACT:
A light-emitting diode (LED) includes a p-type layer, an n-type layer, and an active layer arranged between the p-type layer and the n-type layer. The active layer includes at least one quantum well adjacent to at least one modulation-doped layer. Alternatively, or in addition thereto, at least one surface of the n-type layer or the p-type layer is texturized to form a textured surface facing the active layer.
REFERENCES:
patent: 5077752 (1991-12-01), Tada et al.
patent: 5294833 (1994-03-01), Schetzina
patent: 5319657 (1994-06-01), Otsuka et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5779924 (1998-07-01), Krames et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6153894 (2000-11-01), Udagawa
patent: 6277665 (2001-08-01), Ma et al.
patent: 6291257 (2001-09-01), Kadota
patent: 6376864 (2002-04-01), Wang
patent: 6400452 (2002-06-01), Maynard
patent: 6452206 (2002-09-01), Harman et al.
patent: 6542526 (2003-04-01), Niwa et al.
patent: 6897489 (2005-05-01), Peng et al.
patent: 7142788 (2006-11-01), Price
patent: 7187007 (2007-03-01), Kim et al.
patent: 7271417 (2007-09-01), Chen
patent: 7541206 (2009-06-01), Yoon et al.
patent: 7606492 (2009-10-01), Farmer et al.
patent: 7705348 (2010-04-01), Wang et al.
patent: 7777241 (2010-08-01), Moustakas et al.
patent: 2001/0038102 (2001-11-01), Kawase
patent: 2003/0042479 (2003-03-01), Tsuchiya
patent: 2003/0214989 (2003-11-01), Takase
patent: 2004/0026710 (2004-02-01), Tsuda et al.
patent: 2005/0242364 (2005-11-01), Moustakas et al.
patent: 2006/0273333 (2006-12-01), Wu et al.
patent: 2008/0111146 (2008-05-01), Nakamura et al.
patent: 2008/0279567 (2008-11-01), Huang et al.
patent: 2009/0159907 (2009-06-01), Wang
patent: 2001-102629 (2001-04-01), None
Marui et al., JP2001-102629A Abstract, <http://www.ipdl.inpit.go.jp/homepg—e.ipdl>, Sep. 28, 2010, (Machine Translation).
Bratkovski Alexandre M.
Fattal David A.
Renne Ty Tan Michael
Wang Shih-Yuan
Duong Khanh
Hewlett--Packard Development Company, L.P.
Smith Zandra
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