Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2007-10-23
2007-10-23
Lee, Jong-Suk (James) (Department: 2885)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S081000, C257S091000
Reexamination Certificate
active
10911643
ABSTRACT:
A notch portion7A is disposed on a formation surface of a wiring pattern7and is located in a contact point with a wiring pattern9of an outside substrate8, so that a solder9amelted by reflow soldering slowly flows up along an edge of the notch portion7A, improving a solder-joint performance. The notch portion7A is formed in a recess shape as formed by cutting away the substrate6and as a result, the melted solder stays in the recess portion, which prevents the melted solder from moving up over the notch portion7A.
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Chinese Office Action dated Sep. 8, 2006 (with English translation).
Kato Hideaki
Matsumura Kanae
Ohtsuka Shunsuke
Koha Co., Ltd.
Lee Jong-Suk (James)
McGinn IP Law Group PLLC
Negron Ismael
Toyoda Gosei Co,., Ltd.
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