Light emitting diode including active layer having first and sec

Details Light emitting diode including active layer having first and sec Light emitting diode including active layer having first and sec

1993-10-07

1994-09-06

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 96, 257622, 372 46, H01L 3300

Patent

active

053450922

ABSTRACT:
A light emitting diode comprises a semiconductor substrate of compound semiconductor, an active layer provided above the semiconductor substrate and including first and second active regions, the first active region being spaced apart from the second active region thereby controlling diffusion of an injected minority carrier in a radial direction, the first active region substantially operating as a light emitting region, and a window for emitting light generated at the first active region.

REFERENCES:
patent: 4661960 (1987-04-01), Hirayama et al.
patent: 4675710 (1987-06-01), Ishikawa et al.
patent: 4737961 (1988-04-01), Mori et al.
patent: 4852110 (1989-07-01), Fujii et al.
patent: 5111469 (1992-05-01), Narui et al.

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